Quadruple-well ferroelectricity and topological domain structures in strained Bi<sub>2</sub>O<sub>2</sub>Se-Reference-Cited by-同舟云学术

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Quadruple-well ferroelectricity and topological domain structures in strained Bi₂O₂Se

Published:2024 Issue:16 Volume:12 Page:5951-5957
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhu Ziye¹²³^ORCID,Hu Jiaming²³,Yao Xiaoping²³,Zhao Shu²³

Affiliation:

1. School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310030, China

3. Research Center for Industries of the Future, Westlake University, Hangzhou 310030, China

Abstract

We demonstrate that biaxially strained Bi2O2Se holds unusual quadruple-well dipole orders, a two-step 90° ferroelectric switching and various types of spontaneous topological domain structures.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04733D

Reference43 articles.

1. R.Ramesh , Thin Film Ferroelectric Materials and Devices , Springer , US , 1997

2. Applications of Modern Ferroelectrics

3. Physics of thin-film ferroelectric oxides

4. 100 years of ferroelectricity

5. Two-Dimensional van der Waals Ferroelectrics: Scientific and Technological Opportunities

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