Theoretical studies on the structures and properties of doped graphenes with and without an external electrical field-Reference-Cited by-同舟云学术

Theoretical studies on the structures and properties of doped graphenes with and without an external electrical field

Published:2019 Issue:21 Volume:9 Page:11939-11950
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Yuhua¹²³⁴^ORCID,Wang Weihua⁵²³⁴,Zhu Shuyun⁵²³⁴^ORCID,Yang Ge⁶²³⁴,Zhang Zhiqiang⁷⁸⁹⁴,Li Ping⁵²³⁴

Affiliation:

1. Administrative Office of Laboratory and Equipment

2. Qufu Normal University

3. Qufu

4. PR China

5. College of Chemistry and Chemical Engineering

6. The School of Life Sciences

7. Department of Material and Chemical Engineering

8. Zhengzhou University of Light Industry

9. Zhengzhou 450002

Abstract

To expand the applications of graphene in optoelectronic devices, B, Al, Si, Ge, As, and Sb doped graphenes (marked as B-G, Al-G, Si-G, Ge-G, As-G, and Sb-G, respectively) were synthesised.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA00326F

Reference50 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Colloquium: Andreev reflection and Klein tunneling in graphene

4. The electronic properties of graphene

5. Electronic transport in two-dimensional graphene

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