Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays-Reference-Cited by-同舟云学术

Controlling the random lasing action from GaAs/AlGaAs axial heterostructure nanowire arrays

Published:2024 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Meng Bingheng¹²,Zhang Xuanyu²,Kang Yubin¹,Yu Xuanchi²,Wang Puning¹²,Wang Shan¹²,Tang Jilong¹^ORCID,Hao Qun¹,Wei Zhipeng¹^ORCID,Chen Rui²^ORCID

Affiliation:

1. State Key Laboratory of High Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, P. R. China

2. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China

Abstract

Anderson localized and delocalized random lasers have been realized by controlling the diameter and density of GaAs/AlGaAs axial heterostructure nanowire arrays, which establishes the foundational basis for the control of random lasing.

Funder

Changchun University of Science and Technology

Higher Education Discipline Innovation Project

National Natural Science Foundation of China

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D4NR02734E

Reference46 articles.

1. Advanced Laser Technology for Quantum Communications (Tutorial Review)

2. Fabrication of 3D microfluidic structures inside glass by femtosecond laser micromachining

3. Fabricating subwavelength dot-matrix surface structures of Molybdenum by transient correlated actions of two-color femtosecond laser beams

4. Cancerous tissue mapping from random lasing emission spectra

5. Fluorescent dye-doped silica nanoparticles: new tools for bioapplications