Effects of pressure and temperature on topological electronic materials X<sub>2</sub>Y<sub>3</sub> (X = As, Sb, Bi; Y = Se, Te) using first-principles-Reference-Cited by-同舟云学术

Effects of pressure and temperature on topological electronic materials X₂Y₃ (X = As, Sb, Bi; Y = Se, Te) using first-principles

Published:2023 Issue:31 Volume:25 Page:20969-20978
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Fang Le¹²^ORCID,Chen Chen¹³^ORCID,Lu Xionggang¹⁴,Ren Wei¹⁵^ORCID

Affiliation:

1. State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, ICQMS and Physics Department, Shanghai University, Shanghai 200444, China

2. Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin, Berlin 12489, Germany

3. NOMAD Laboratory, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin 14195, Germany

4. School of Materials Science, Shanghai Dianji University, Shanghai 200240, China

5. Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China

Abstract

We systematically study the thermal and topological properties of X2Y3 (X = As, Sb, Bi; Y = Se, Te) and the effects of pressure and temperature on their electronic properties using first-principles.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

China Postdoctoral Science Foundation

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01951A

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