Interpreting interfacial semiconductor–liquid capacitive characteristics impacted by surface states: a theoretical and experimental study of CuGaS2
Author:
Affiliation:
1. Division of Materials Engineering
2. Faculty of Engineering
3. McGill University
4. Montréal
5. Canada
6. Département de chimie
7. Université du Québec à Montréal
Abstract
A first-order approach is presented to estimate the doping concentration and flat band potential of a semiconductor photoanode subject to surface states.
Funder
Fonds Québécois de la Recherche sur la Nature et les Technologies
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP02888F
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