Selective grain boundary passivation by ammonium nitrate for enhanced performance and stability of FA-Cs based perovskite solar cells-Reference-Cited by-同舟云学术

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Selective grain boundary passivation by ammonium nitrate for enhanced performance and stability of FA-Cs based perovskite solar cells

Published:2024 Issue:11 Volume:60 Page:1460-1463
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Li Xiaoshan¹,Yu Wenjing¹²,Hou Tian¹,Yang Xin¹,Wang Xin¹,Jiang Guangmian¹,Fu Zhipeng¹,Chen Kaipeng¹,Li Yanlin¹,Yang Chengbin¹,Sun Xiaoran¹,Zhang Meng¹³^ORCID

Affiliation:

1. School of New Energy and Materials, Southwest Petroleum University (SWPU), Chengdu, 610500, China

2. Sichuan Shale Gas Project Management Department, CNPC Bohai Drilling Engineering Co. Ltd., Chengdu 610057, China

3. The Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia

Abstract

Ammonium nitrate can be used for selective grain boundary passivation of FA-Cs based perovskite thin films and solar cells.

Funder

National Natural Science Foundation of China

Sichuan Province Science and Technology Support Program

Chengdu Municipal Science and Technology Program

Southwest Petroleum University

Australian Research Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CC/D3CC05504C

Reference35 articles.

1. Understanding the Effect of Lead Iodide Excess on the Performance of Methylammonium Lead Iodide Perovskite Solar Cells

2. Tailoring Interlayer Spacers for Efficient and Stable Formamidinium‐Based Low‐Dimensional Perovskite Solar Cells

3. Ultrafast Growth of High-Quality Monolayer WSe2 on Au

4. Zwitterionic-Surfactant-Assisted Room-Temperature Coating of Efficient Perovskite Solar Cells

5. “Visible” Phase Separation of MAPbI 3 /δ‐FAPbI 3 Films for High‐Performance and Stable Photodetectors

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1. Pinhole Healing of Pristine FAPbI₃ Films via Homogeneous Recrystallization with Mixed Vapor of Tetramethylene Sulfoxide and Anisole;Advanced Materials Interfaces;2024-05-11

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