Boron speciation in acid digests of metallurgical grade silicon reveals problem for accurate boron quantification by inductively coupled plasma – optical emission spectroscopy-Reference-Cited by-同舟云学术

Boron speciation in acid digests of metallurgical grade silicon reveals problem for accurate boron quantification by inductively coupled plasma – optical emission spectroscopy

Published:2014 Issue:4 Volume:29 Page:614-622
ISSN:0267-9477
Container-title:J. Anal. At. Spectrom.
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Galler Patrick¹²³,Raab Andrea⁴⁵⁶⁷⁸,Freitag Sabine⁴⁵⁶⁷⁸,Blandhol Kjell¹²³,Feldmann Jörg⁴⁵⁶⁷⁸

Affiliation:

1. Elkem AS, Technology

2. Central Analytical Laboratory

3. NO-4675 Kristiansand, Norway

4. University of Aberdeen

5. College of Physical Science

6. Department of Chemistry

7. Trace Element Speciation Laboratory (TESLA)

8. Aberdeen AB24 3UE, UK

Abstract

A sample preparation protocol for accurate B quantification in metallurgical grade Si by ICP-OES is described and validated against PGAA.

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/JA/C3JA50383F

Reference32 articles.

1. A simple process to remove boron from metallurgical grade silicon

2. Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry

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