Laser annealing of electrodeposited CuInSe2semiconductor precursors: experiment and modeling-Reference-Cited by-同舟云学术

Laser annealing of electrodeposited CuInSe2semiconductor precursors: experiment and modeling

Published:2017 Issue:6 Volume:5 Page:1336-1345
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Meadows H. J.¹²³⁴,Misra S.⁵⁶⁷⁸,Simonds B. J.⁹¹⁰⁸,Kurihara M.¹²³⁴,Schuler T.¹²³⁴,Reis-Adonis V.¹²³⁴,Bhatia A.¹¹⁶⁷⁸,Scarpulla M. A.⁵⁶⁷⁸¹¹,Dale P. J.¹²³⁴^ORCID

Affiliation:

1. Physics and Materials Science Research Unit

2. University of Luxembourg

3. Belvaux

4. Luxembourg

5. Electrical and Computer Engineering

6. University of Utah

7. Salt Lake City

8. USA

9. National Institute of Standards and Technology (NIST)

10. Boulder

11. Materials Science and Engineering

Abstract

Rapid laser annealing converts CuInSe₂precursors into working semiconductors only when the precursor has suitable optical and microstructural properties.

Funder

Fonds National de la Recherche Luxembourg

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC03623F

Reference53 articles.

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