Laser annealing of electrodeposited CuInSe2semiconductor precursors: experiment and modeling

Author:

Meadows H. J.1234,Misra S.5678,Simonds B. J.9108,Kurihara M.1234,Schuler T.1234,Reis-Adonis V.1234,Bhatia A.11678,Scarpulla M. A.567811,Dale P. J.1234ORCID

Affiliation:

1. Physics and Materials Science Research Unit

2. University of Luxembourg

3. Belvaux

4. Luxembourg

5. Electrical and Computer Engineering

6. University of Utah

7. Salt Lake City

8. USA

9. National Institute of Standards and Technology (NIST)

10. Boulder

11. Materials Science and Engineering

Abstract

Rapid laser annealing converts CuInSe2precursors into working semiconductors only when the precursor has suitable optical and microstructural properties.

Funder

Fonds National de la Recherche Luxembourg

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Reference53 articles.

1. https://www.zsw-bw.de/fileadmin/user_upload/PDFs/Pressemitteilungen/2016/pr09-2016-ZSW-WorldRecordCIGS.pdf

2. K. Kushiya , A.Shimizu, K.Saito, A.Yamada and M.Konagai, Development of high-efficiency CuInxGa1−xSe2 thin-film solar cells by selenization with elemental Se vapor in vacuum, Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), Waikoloa, HI, 1994, vol. 1, pp. 87–90

3. Three-step H2Se/Ar/H2S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In,Ga)(Se,S)2 thin films

4. All Solution-Processed Chalcogenide Solar Cells - from Single Functional Layers Towards a 13.8% Efficient CIGS Device

5. Efficiency and stability enhancement of laser-crystallized polycrystalline silicon thin-film solar cells by laser firing of the absorber contacts

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