Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite-Reference-Cited by-同舟云学术

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Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

Published:2019 Issue:28 Volume:21 Page:15854-15860
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jena A. K.¹²³⁴⁵,Satapathy S.⁶⁷⁸⁵⁹,Mohanty J.¹²³⁴⁵^ORCID

Affiliation:

1. Nanomagnetism and Microscopy Laboratory

2. Department of Physics

3. Indian Institute of Technology Hyderabad

4. Sangareddy

5. India

6. Laser Material Section

7. Raja Ramanna Center for Advanced Technology

8. Indore 452013

9. Homi Bhaba National Institute

Abstract

Low field magnetic saturation and forming-free resistive switching behavior in non-magnetic modified room temperature multiferroic BiFeO₃ thin film.

Funder

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP02528F

Reference38 articles.

1. Multiferroic and magnetoelectric materials

2. Multiferroics: a magnetic twist for ferroelectricity

3. Physics and Applications of Bismuth Ferrite

4. Single-domain multiferroic BiFeO3 films

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