Selective grafting of phosphorus onto Ti3C2Tx MXene enables a two-proton process and enhanced charge storage

Author:

Li Hao1ORCID,Fan Ke1ORCID,Xiong Pei1,Zhou Hanmo1,Lin Zezhou1,Tao Keyu2,Liu Tiancheng1ORCID,Guo Xuyun1ORCID,Zhu Ye1,Zhuang Lyuchao1,Han Wei3,Yang Chen1,Liu Yan4,Meng-Jung Li Molly1ORCID,Fu Mingwang5,Wang John6ORCID,Huang Haitao1ORCID

Affiliation:

1. Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China

2. College of Chemistry and Chemical Engineering, Chongqing University, Shapingba, Chongqing 401331, P. R. China

3. Hubei Yangtze Memory Laboratories, Wuhan, Hubei, 430205, P. R. China

4. School of Chemical Engineering and Technology, Sun Yat-sen University, Tangjiawan, Zhuhai 519082, P. R. China

5. Department of Mechanical Engineering, Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China

6. Department of Materials Science and Engineering, National University of Singapore, 117574, Singapore

Abstract

Phosphorus atoms are selectively doped onto Ti3C2Tx MXene, leading to solely P–O doped species, which serve as new active sites to enable two-proton bonding/debonding process to boost charge storage ability of MXene.

Funder

Hong Kong Polytechnic University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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