Molecular dynamics study of interfacial thermal transport between silicene and substrates-Reference-Cited by-同舟云学术

Molecular dynamics study of interfacial thermal transport between silicene and substrates

Published:2015 Issue:37 Volume:17 Page:23704-23710
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Jingchao¹²³⁴,Hong Yang⁵²³⁴,Tong Zhen⁶⁷⁸⁹,Xiao Zhihuai¹⁰¹¹¹²⁹,Bao Hua⁶⁷⁸⁹,Yue Yanan¹⁰¹¹¹²⁹

Affiliation:

1. Holland Computing Center

2. University of Nebraska-Lincoln

3. Lincoln

4. USA

5. Department of Chemistry

6. University of Michigan-Shanghai Jiao Tong University Joint Institute

7. Shanghai Jiao Tong University

8. Shanghai 200240

9. China

10. School of Power and Mechanical Engineering

11. Wuhan University

12. Wuhan

Abstract

For the first time, the interfacial thermal resistance between silicene and multiple substrates,i.e., crystalline silicon and silica, amorphous silicon and silica are calculated using a transient heating molecular dynamics technique.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP03323C

Reference53 articles.

1. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

2. Anomalous thermal response of silicene to uniaxial stretching

3. A review on silicene — New candidate for electronics

4. Epitaxial growth of a silicene sheet

5. Vacancy-defect–induced diminution of thermal conductivity in silicene

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