Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration-Reference-Cited by-同舟云学术

Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration

Published:2015 Issue:34 Volume:17 Page:22106-22114
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Meric Zeynep¹²³⁴,Mehringer Christian⁵²³⁴,Karpstein Nicolas¹²³⁴,Jank Michael P. M.⁶³⁴,Peukert Wolfgang⁵²³⁴,Frey Lothar¹²³⁴⁶

Affiliation:

1. Chair of Electron Devices

2. Friedrich-Alexander-Universität Erlangen-Nürnberg

3. 91058 Erlangen

4. Germany

5. Institute of Particle Technology

6. Fraunhofer Institute for Integrated Systems and Device Technology

Abstract

Top and cross-sectional view of a Ge NP layer deposited from dispersion. Due to specific ALD post processing ambipolar TFTs can be fabricated from those layers. A circuit employing two ambipolar TFTs functions as a NOT gate with an inverter gain of up to 4.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP03321G

Reference32 articles.

1. Creating Ligand-Free Silicon Germanium Alloy Nanocrystal Inks

2. Characterization of Si–Ge alloy nanocrystals produced in a non-thermal plasma reactor

3. Fabrication, charge carrier transport, and application of printable nanocomposites based on indium tin oxide nanoparticles and conducting polymer 3,4-ethylenedioxythiophene/polystyrene sulfonic acid