Effect of Si doping on the electronic properties of BN monolayer-Reference-Cited by-同舟云学术

Effect of Si doping on the electronic properties of BN monolayer

Published:2014 Issue:10 Volume:6 Page:5526-5531
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Gupta Sanjeev K.¹²³,He Haiying⁴⁵⁶,Banyai Douglas¹²³,Si Mingsu¹²³,Pandey Ravindra¹²³,Karna Shashi P.⁷⁸⁹¹⁰

Affiliation:

1. Department of Physics

2. Michigan Technological University

3. Houghton, USA

4. Department of Physics and Astronomy

5. Valparaiso University

6. Valparaiso, USA

7. US Army Research Laboratory

8. Weapons and Materials Research Directorate

9. ATTN: RDRL-WM

10. Aberdeen Proving Ground, USA

Abstract

Unique electronic and transport properties were predicted for Si-doped BN monolayer consisting of a significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and negative differential resistance.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00159A

Reference36 articles.

1. Thin films of boron nitride grown by CVD

2. Growth of boron nitride thin films by metal-organic chemical vapour deposition

3. Investigation of the BN films prepared by low pressure chemical vapor deposition

4. Electronic Structure of Monolayer Hexagonal Boron Nitride Physisorbed on Metal Surfaces

5. Density functional theory investigation of the geometric and spintronic structure ofh-BN/Ni(111) in view of photoemission and STM experiments

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