Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage-Reference-Cited by-同舟云学术

Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage

Published:2020 Issue:42 Volume:8 Page:14789-14795
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lin Ya¹²³⁴,Zhang Xue¹²³⁴,Shan Xuanyu¹²³⁴,Zeng Tao¹²³⁴,Zhao Xiaoning¹²³⁴,Wang Zhongqiang¹²³⁴,Kang Zhenhui⁵⁶⁷⁸⁴^ORCID,Xu Haiyang¹²³⁴^ORCID,Liu Yichun¹²³⁴

Affiliation:

1. Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University)

2. Ministry of Education

3. Changchun

4. China

5. Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices

6. Institute of Functional Nano and Soft Materials (FUNSOM)

7. Soochow University

8. Suzhou

Abstract

A photo-tunable and flexible organic RRAM device based on poly(4-vinylphenol) (PVP) and N-doped carbon quantum dot nanocomposites for encrypted image storage.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Ministry of Education of the People's Republic of China

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

People's Government of Jilin Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry