Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information and Electronics
2. Kyung Hee University
3. Yongin
4. Korea
5. Electronics and Telecommunications Research Institute
6. Daejeon 34129
Abstract
Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO2 ferroelectric gate insulators.
Funder
National Research Foundation of Korea
Electronics and Telecommunications Research Institute
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR02401E
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