In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects-Reference-Cited by-同舟云学术

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

Published:2020 Issue:1 Volume:2 Page:109-139
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zhao Siwen¹²³⁴⁵^ORCID,Dong Baojuan⁶⁷⁸⁹⁵,Wang Huide¹²³⁴⁵,Wang Hanwen⁶⁷⁸⁹⁵,Zhang Yupeng¹²³⁴⁵^ORCID,Han Zheng Vitto⁶⁷⁸⁹⁵,Zhang Han¹²³⁴⁵^ORCID

Affiliation:

1. International Collaborative Laboratory of 2D Materials for Optoelectronics Science Technology of Ministry of Education

2. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province

3. Shenzhen University

4. Shenzhen 518060

5. China

6. Shenyang National Laboratory for Materials Science

7. Institute of Metal Research

8. Chinese Academy of Sciences

9. Shenyang 110000

Abstract

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices.

Funder

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Commission

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/C9NA00623K

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