Synergetic enhancement of CsPbI3 nanorod-based high-performance photodetectors via PbSe quantum dot interface engineering

Author:

Sulaman Muhammad123ORCID,Yang Shengyi12ORCID,Guo Honglian3,Li Chuanbo3,Imran Ali4,Bukhtiar Arfan5,Qasim Muhammad6,Ge Zhenhua12,Song Yong6,Jiang Yurong6,Zou Bingsuo5ORCID

Affiliation:

1. Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Center for Micro-Nanotechnology, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China

2. Key Lab of Advanced Optoelectronic Quantum Design and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China

3. Optoelectronics Research Center, School of Science, Minzu University of China, Beijing, 100081, China

4. School of Micro-Nanoelectronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, State Key Labs of Silicon Materials and Modern Optical Instrumentation, Zhejiang University, Hangzhou 311200, China

5. MOE Key Lab of New Processing Technology for Nonferrous Metals and Materials and Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials, School of Resources, Environments and Materials, Guangxi University, Nanning 530004, P. R. China

6. Beijing Key Lab for Precision Optoelectronic Measurement Instrument and Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, P. R. China

Abstract

The article explores the enhanced performance of photodetectors based on nanocomposites of CsPbI3 nanorods and PbSe QDs by studying their impact on charge carrier dynamics and optoelectronic properties, thus to understand the underlain mechanism.

Funder

National Natural Science Foundation of China

Guangxi University

Ministry of Science and Technology of the People's Republic of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

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