The electronic structure of a strongly bound sandwich MoS<sub>2</sub>–WS<sub>2</sub>heterobilayer-Reference-Cited by-同舟云学术

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The electronic structure of a strongly bound sandwich MoS₂–WS₂heterobilayer

Published:2023 Issue:29 Volume:25 Page:19834-19844
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zewdie Getasew Mulualem¹^ORCID,Boujnah Mourad¹,Kim Ju Yeon²^ORCID,Kang Hong Seok³^ORCID

Affiliation:

1. Institute for Application of Advanced Materials, Jeonju University, Chonbuk 55069, Republic of Korea

2. Department of Micro-device engineering, Korea University, Seongbuk-gu, Seoul 02841, Republic of Korea

3. Department of Nano and Advanced Materials, Jeonju University, Chonju, Chonbuk 55069, Republic of Korea

Abstract

A Ca-intercalated Nb-doped MoS2–WS2bilayer is a semiconductor with electron–hole separated into different layers under strain, exhibiting strong interlayer interaction.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP02212A

Reference54 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Coherent Atomic and Electronic Heterostructures of Single-Layer MoS2

3. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

4. Engineering Optical and Electronic Properties of WS2 by Varying the Number of Layers

5. 2D Transition Metal Dichalcogenides for Photocatalysis

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