Inherent characteristics of ultra-photosensitive Al/Cu–CeO<sub>2</sub>/p-Si metal oxide semiconductor diodes-Reference-Cited by-同舟云学术

Inherent characteristics of ultra-photosensitive Al/Cu–CeO₂/p-Si metal oxide semiconductor diodes

Published:2022 Issue:4 Volume:10 Page:1445-1457
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Manikandan V.¹^ORCID,Marnadu R.²,Chandrasekaran J.³^ORCID,Vigneselvan S.⁴,Mane R. S.⁵^ORCID,Banks Craig E.⁶^ORCID,Mirzaei Ali⁷

Affiliation:

1. Department of Physics, Kongunadu Arts and Science College, Coimbatore – 641 029, India

2. PG Department of Physics, G.T.N. Arts College, Dindigul 624 005, India

3. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, India

4. Department of Physics, Government College of Technology, Coimbatore 641 013, India

5. Center for Nanomaterial & Energy Devices, Swami Ramanand Teerth Marathwada University, Dnyanteerth, Vishnupuri, Nanded 431606, India

6. Faculty of Science and Engineering, Manchester Metropolitan University, Chester Street, Manchester M1 5GD, UK

7. Department of Materials Science and Engineering, Shiraz University of Technology, Shiraz, Iran

Abstract

An ultrahigh photosensitive diode was developed using a Cu-doped CeO2thin film through spray pyrolysis processing, which has made a unique contribution in the field of optoelectronic device fabrication process.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05630A

Reference75 articles.

1. Fabrication of cerium-doped β-Ga_2O_3 epitaxial thin films and deep ultraviolet photodetectors

2. Metal oxide semiconductor-based Schottky diodes: a review of recent advances

3. Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors

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