Inkjet-printed Ce-doped SnO<sub><i>x</i></sub> electron transport layer for improved performance of planar perovskite solar cells-Reference-Cited by-同舟云学术

Inkjet-printed Ce-doped SnO_x electron transport layer for improved performance of planar perovskite solar cells

Published:2024 Issue:15 Volume:5 Page:6270-6276
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Lu Dongli¹^ORCID,Jamshidi Mahboubeh²^ORCID,Dun Chaochao³^ORCID,Urban Jeffrey J.³^ORCID,Gardner James M.²^ORCID,Belova Liubov¹

Affiliation:

1. Department of Materials Science and Engineering, KTH Royal Institute of Technology, 10044 Stockholm, Sweden

2. Department of Chemistry, Applied Physical Chemistry, KTH Royal Institute of Technology, 10044 Stockholm, Sweden

3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Abstract

Inkjet-printed Ce-doped SnOx ETLs achieved improved photovoltaic performance originating from the increased conductivity, suppressed surface defects, and improved energy level alignment at the ETL/perovskite interface, compared to undoped SnOx ETLs.

Funder

Energimyndigheten

Basic Energy Sciences

Stand Up for Energy

Jernkontoret

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MA/D4MA00094C

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