Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping-Reference-Cited by-同舟云学术

Raman spectroscopy and carrier scattering in 2D tungsten disulfides with vanadium doping

Published:2023 Issue:10 Volume:7 Page:2059-2067
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Zou Jingyun¹²,Xu Yingjie¹,Miao Xinyue¹,Chen Hongyu¹,Zhang Rongjie²,Tan Junyang²,Tang Lei²,Cai Zhengyang²,Zhang Cheng¹,Kang Lixing³^ORCID,Zhang Xiaohua⁴^ORCID,Ma Chunlan¹,Cheng Hui-Ming²,Liu Bilu²^ORCID

Affiliation:

1. Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, China

2. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, China

3. Division of Advanced Nano-Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China

4. Innovation Center for Textile Science and Technology, Donghua University, Shanghai, 201620, China

Abstract

A characteristic Raman peak is identified as the fingerprint to study the enhanced el–ph coupling in vanadium-doped WS2. Vanadium atoms cause an n- to p-type transition and make ionization scattering dominate the carrier transport process in V-WS2.

Funder

National Natural Science Foundation of China

Shenzhen Fundamental Research Program

Suzhou University of Science and Technology

Science and Technology Program of Suzhou

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/QM/D2QM01108E

Reference34 articles.