Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films-Reference-Cited by-同舟云学术

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films

Published:2014 Issue:39 Volume:16 Page:21804-21811
ISSN:1463-9076
Container-title:Phys. Chem. Chem. Phys.
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Vandana Vandana¹²³⁴,Batra Neha¹²³⁴,Gope Jhuma¹²³⁴,Singh Rajbir¹²³⁴,Panigrahi Jagannath¹²³⁴,Tyagi Sanjay¹²³⁴,Pathi P.¹²³⁴,Srivastava S. K.¹²³⁴,Rauthan C. M. S.¹²³⁴,Singh P. K.¹²³⁴

Affiliation:

1. Silicon Solar Cell Group

2. (Network of Institutes for Solar Energy)

3. CSIR - National Physical Laboratory

4. New Delhi-110012, India

Abstract

Silicon surface passivation is studied using Al₂O₃ films by the thermal ALD process. A surface recombination velocity of below 10 cm s⁻¹ is realized for short annealing times (∼100 s). As-deposited and annealed films show the presence of positive fixed charges.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CP/C4CP03430A

Reference42 articles.

1. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

2. Surface passivation of crystalline silicon solar cells: a review

3. International Technology Roadmap for Photovoltaic (ITRPV) 2014; http://www.itrpv.net

4. Effectiveness of anisotropic etching of silicon in aqueous alkaline solutions

5. Silver catalyzed nano-texturing of silicon surfaces for solar cell applications

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