Synthesis, characterization, self-assembly and non-ohmic Schottky barrier diode behaviors of two iron(iii) based semiconductors with theoretical insight-Reference-Cited by-同舟云学术

Synthesis, characterization, self-assembly and non-ohmic Schottky barrier diode behaviors of two iron(iii) based semiconductors with theoretical insight

Published:2020 Issue:31 Volume:22 Page:5170-5181
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Basak Tanmoy¹²³⁴⁵,Das Dhananjoy⁶³⁴⁵,Ray Partha Pratim⁶³⁴⁵^ORCID,Banerjee Snehasis⁷⁸⁵^ORCID,Chattopadhyay Shouvik¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry

2. Inorganic Section

3. Jadavpur University

4. Kolkata-700032

5. India

6. Department of Physics

7. Govt. College of Engineering and Leather Technology

8. Kolkata 700106

Abstract

Schottky barrier diodes have been fabricated using two iron(iii) Schiff base complexes. The total and partial DOS values have been calculated using DFT to calculate the band gaps in these complexes.

Funder

Council of Scientific and Industrial Research, India

University Grants Commission

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00223B

Reference53 articles.