Multilevel memristor effect in metal–semiconductor core–shell nanoparticles tested by scanning tunneling spectroscopy-Reference-Cited by-同舟云学术

Multilevel memristor effect in metal–semiconductor core–shell nanoparticles tested by scanning tunneling spectroscopy

Published:2015 Issue:21 Volume:7 Page:9886-9893
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chakrabarti Sudipto¹²³,Pal Amlan J.¹²³

Affiliation:

1. Department of Solid State Physics

2. Indian Association for the Cultivation of Science

3. Jadavpur, India

Abstract

Scanning tunneling spectroscopy experiments of Au–CZTS metal–semiconductor core–shell nanoparticles reveal a multilevel memristor effect. Voltage pulses of suitable magnitudes were applied to achieve two high-conducting states.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR01161B

Reference31 articles.

1. Memristor-The missing circuit element

2. Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic

3. Optimization of an organic memristor as an adaptive memory element

4. Switching Properties of Titanium Dioxide Nanowire Memristor

5. Probing the switching mechanism in ZnO nanoparticle memristors

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