Electronic structure of Al, Ga, In and Cu doped ZnO/Cu(111) bilayer films-Reference-Cited by-同舟云学术

Electronic structure of Al, Ga, In and Cu doped ZnO/Cu(111) bilayer films

Published:2019 Issue:1 Volume:21 Page:369-377
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Thang Ho Viet¹²³⁴^ORCID,Pacchioni Gianfranco¹²³⁴^ORCID

Affiliation:

1. Departimento di Scienza dei Materiali

2. Università di Milano-Bicocca

3. 20125 Milano

4. Italy

Abstract

The effect of doping with group-III metals (Al, Ga and In) and Cu free standing and Cu(111) supported ZnO bilayer films has been investigated computationally by using the DFT+U method including dispersion contributions.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C8CP06717A

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5. Electric field effect in pulsed laser deposition of epitaxial ZnO thin film

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