Strain-induced quantum phase transition in the C3Sc4 monolayer: towards multiple gapless fermions-Reference-Cited by-同舟云学术

Strain-induced quantum phase transition in the C3Sc4 monolayer: towards multiple gapless fermions

Published:2021 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Han Yilin¹²³⁴,Liu Ying⁵⁶⁷⁴,Wang Jianhua¹²³⁴,Yang Tie¹²³⁴^ORCID,Zhou Feng¹²³⁴,Kuang Minquan¹²³⁴,Wang Xiaotian¹²³⁴^ORCID,Zhang Gang⁸⁹¹⁰¹¹^ORCID

Affiliation:

1. School of Physical Science and Technology

2. Southwest University

3. Chongqing 400715

4. China

5. School of Materials Science and Engineering

6. Hebei University of Technology

7. Tianjin 300130

8. Institute of High Performance Computing

9. Agency for Science

10. Technology and Research (A*STAR)

11. Singapore

Abstract

By applying the biaxial tensile strain, a variety of novel fermionic states can be realized in 2D topological material C₃Sc₄, including multiple Dirac fermionic states, gapless Weyl fermionic states, and massless pseudospin-1 fermionic states.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Chongqing

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR00382H

Reference64 articles.

1. Unique topological nodal line states and associated exceptional thermoelectric power factor platform in Nb3GeTe6 monolayer and bulk

2. 2D materials: to graphene and beyond

3. Recent development in 2D materials beyond graphene

4. Electric Field Effect in Atomically Thin Carbon Films

5. The electronic properties of graphene

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