Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor-Reference-Cited by-同舟云学术

Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

Published:2021 Issue:39 Volume:9 Page:13640-13646
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen X. H.¹²,Song E. H.²^ORCID,Zhou Y. Y.²,He F. Q.²,Yang J. Q.²,Zhang Q. Y.²^ORCID

Affiliation:

1. School of Intelligent Engineering, Shaoguan University, Shaoguan 512005, China

2. State Key Laboratory of Luminescent Materials and Devices, and Guangdong Provincial Key Laboratory of Fiber Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, China

Abstract

Benefiting from a proposed distorted octahedral site occupation strategy using Cr3+, we demonstraed a high-efficiency broadband NIR-emitting phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full width at half maximum of 160 nm and a record external quantum efficiency of ∼40%.

Funder

National Natural Science Foundation of China

Guangzhou Municipal Science and Technology Bureau

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03057D

Reference39 articles.

1. Illumination Invariant Face Recognition Using Near-Infrared Images

2. A General Ammonium Salt Assisted Synthesis Strategy for Cr 3+ ‐Doped Hexafluorides with Highly Efficient Near Infrared Emissions