High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications-Reference-Cited by-同舟云学术

High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications

Published:2022 Issue:4 Volume:24 Page:818-827
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ding Shoujun¹²^ORCID,Ren Hao¹,Liu Wenpeng²,He Aifeng³,Tang Xubing¹,Zhang Qingli²

Affiliation:

1. School of Science and Engineering of Mathematics and Physics, Anhui University of Technology, Maanshan, Anhui, 243002, PR China

2. Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui, 230031, PR China

3. Key Laboratory on Applied Physics and Chemistry, Shaanxi Applied Physics and Chemistry Research Institute, Xi'an, Shaanxi, 710061, PR China

Abstract

A Er:GdTaO4 single crystal was grown by Cz method. The results indicate that the crystal is promising for diode pumped green lasers and probably useful for solid-state lighting.

Funder

Natural Science Foundation of Anhui Province

University Natural Science Research Project of Anhui Province

Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energies

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CE/D1CE01333E

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