Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study-Reference-Cited by-同舟云学术

Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study

Published:2022 Issue:34 Volume:12 Page:21940-21945
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Yong¹²,Bruyère Stéphanie³,Kumagai Yu⁴,Tsunoda Naoki⁴,Oba Fumiyasu⁴,Ghanbaja Jaafar³,Sun Hui¹,Dai Bo²,Pierson Jean-François³^ORCID

Affiliation:

1. School of Space Science and Physics, Shandong University, Weihai 264209, China

2. State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China

3. Institut Jean Lamour, UMR 7198-CNRS, Université de Lorraine, Nancy 54011, France

4. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan

Abstract

A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films.

Funder

National Natural Science Foundation of China

State Key Laboratory of Environmental-friendly Energy Materials

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA01887J

Reference38 articles.

1. Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

2. All Transparent Metal Oxide Ultraviolet Photodetector

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4. Room temperature fabrication of transparent p-NiO/n-ZnO junctions with tunable electrical properties

5. Nickel Oxide Electrode Interlayer in CH3NH3PbI3Perovskite/PCBM Planar-Heterojunction Hybrid Solar Cells

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