GaN LEDs with <i>in situ</i> synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching-Reference-Cited by-同舟云学术

GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching

Published:2022 Issue:17 Volume:10 Page:6794-6804
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xiong Fangzhu¹,Sun Jie²^ORCID,Cole Matthew T.³,Guo Weiling¹,Yan Chunli⁴,Dong Yibo¹,Wang Le¹,Du Zaifa¹,Feng Shiwei¹,Li Xuan¹,Guo Tailiang²,Yan Qun²

Affiliation:

1. Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, China

2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, and College of Physics and Information Engineering of Fuzhou University, Fuzhou 350100, China

3. Department of Electronic and Electrical Engineering, University of Bath, Bath BA120BN, UK

4. Department of Information and Automation, Library of Fuzhou University, Fuzhou 350108, China

Abstract

High-quality and patterned graphene is grown directly on GaN LED arrays for transparent and heat-spreading electrodes. The CVD is done at 600 °C for 2 min. Sacrificial Co acts both as GaN mesa etching mask and transfer-free graphene growth catalyst.

Funder

Beijing Municipal Commission of Education

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC05279A

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