Improving the control of the electroforming process in oxide-based memristive devices by X-ray nanopatterning

Author:

Mino Lorenzo1ORCID,Bonino Valentina2ORCID,Alessio Andrea3,Picollo Federico3ORCID,Kuncser Andrei4,Mercioniu Ionel4,Vlaicu Aurel-Mihai4,Badica Petre4,Brescia Rosaria5ORCID,Fretto Matteo6,Goss Kalle7ORCID,Dittmann Regina7ORCID,Truccato Marco3ORCID

Affiliation:

1. Department of Chemistry, Interdepartmental Centre NIS, University of Torino, via P. Giuria 7, Torino, Italy, 10125, Italy

2. European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, BP 220, 38043 Grenoble Cedex 9, France

3. Department of Physics, University of Torino, Interdepartmental Centre NIS, via P. Giuria 1, Torino, Italy, 10125, Italy

4. National Institute of Materials Physics, Street Atomistilor 405A, Magurele, Ilfov, 077125, Romania

5. Electron Microscopy Facility, Italian Institute of Technology (IIT), Via Morego 30, Genova, 16163, Italy

6. Istituto Nazionale di Ricerca Metrologica (INRiM), Strada delle Cacce 91, 10135, Torino, Italy

7. Peter Gruenberg Institute – Electronic Materials (PGI-7), Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany

Abstract

We tuned the oxygen content in a Ta/TiO2/Pt memristive device at the nanoscale by a synchrotron X-ray nanobeam. We obtained a conductive filament of oxygen vacancies in the desired position in the material to achieve a controlled resistive switching.

Funder

Ministero dell'Università e della Ricerca

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

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