Kinetic arrest of atomic diffusion-induced spin gapless semiconductor in Ti<sub>2</sub>MnAl Heusler compound-Reference-Cited by-同舟云学术

Kinetic arrest of atomic diffusion-induced spin gapless semiconductor in Ti₂MnAl Heusler compound

Published:2023 Issue:27 Volume:11 Page:9172-9178
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Guijiang¹²^ORCID,Sun Qihang²,Xu Lei¹,Liu Guodong³^ORCID,Cao Zhenhua¹

Affiliation:

1. College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China

2. 2011 College, Nanjing Tech University, Nanjing 211816, China

3. School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China

Abstract

The metastable spin gapless semiconductor Ti2MnAl results from the kinetic arrest of atomic diffusion during sample preparation from the high-temperature relatively low-symmetric phase to the low-temperature high-symmetric phase.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00846K

Reference35 articles.

1. Proposal for a New Class of Materials: Spin Gapless Semiconductors

2. High-throughput screening for spin-gapless semiconductors in quaternary Heusler compounds

3. Investigation of nodal line spin-gapless semiconductors using first-principles calculations

4. Spin-gapless semiconductors for future spintronics and electronics

5. Spin‐Gapless Semiconductors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unveiling the structure-property relationship in a disordered inverse Heusler alloy Ti2MnAl;Physics Letters A;2024-08

2. Theoretical investigations on pressure-driven large-volume-change martensitic phase transition in ductile all-d-metal Heusler compound Ni2MnTa;Journal of Magnetism and Magnetic Materials;2024-01

3. Interface compatibility-induced quasi-volume-preserving martensitic phase transition in all-d-metal Co₂NiT (T = Ti and V) Heusler compounds;Journal of Materials Chemistry C;2024

4. CoMnCrGa: a novel ferromagnetic material with high spin-polarization for room temperature spintronics;Journal of Materials Chemistry C;2023