Combined piezoelectricity, valley splitting and Dzyaloshinskii–Moriya interaction in Janus GdXY (X, Y = Cl, Br, I) magnetic semiconductors-Reference-Cited by-同舟云学术

Combined piezoelectricity, valley splitting and Dzyaloshinskii–Moriya interaction in Janus GdXY (X, Y = Cl, Br, I) magnetic semiconductors

Published:2023 Issue:12 Volume:25 Page:8600-8607
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhang Dehe¹^ORCID,Li Aolin²,Zhang Bei³^ORCID,Zhou Wenzhe²,Duan Haiming³^ORCID,Ouyang Fangping¹²³^ORCID

Affiliation:

1. School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China

2. State Key Laboratory of Powder Metallurgy, and Powder Metallurgy Research Institute, Central South University, Changsha 410083, People's Republic of China

3. School of Physics and Technology, Xinjiang University, Urumqi 830046, People's Republic of China

Abstract

The Janus monolayer 2H-GdXY (X, Y = Cl, Br, I) combines both intrinsic valley splitting and strong Dzyaloshinskii–Moriya interaction (DMI), which can be greatly tuned by biaxial strain to obtain a skyrmions with expected size.

Funder

Central South University

National Natural Science Foundation of China

Natural Science Foundation for Distinguished Young Scholars of Hunan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D2CP04482J

Reference60 articles.

1. 2D materials for spintronic devices