Effects of selenium incorporation on the performance of polythiophene based organic electrochemical transistors-Reference-Cited by-同舟云学术

Effects of selenium incorporation on the performance of polythiophene based organic electrochemical transistors

Published:2024 Issue:22 Volume:12 Page:7935-7942
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Meisi¹,Feng Wang¹,Lan Yu¹,Sun Yimin¹,Li Ping²,Li Jianfeng³,Yang Wanli³,Li Hongxiang⁴,Ding Junqiao¹^ORCID,Chen Jianhua¹^ORCID

Affiliation:

1. School of Chemical Science and Technology, Yunnan University, Kunming 650500, China

2. State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi’an, Shaanxi 710049, People's Republic of China

3. Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China

4. College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China

Abstract

This study highlights that an appropriate selenium content should be evaluated to balance the trade-off between charge transfer and volumetric capacitance, paving the way for the optimal product of electronic mobility and volumetric charge storage.

Funder

National Natural Science Foundation of China

Science and Technology Department of Sichuan Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01226G

Reference46 articles.

1. Organic Electrochemical Transistors for In Vivo Bioelectronics

2. Complementary Logic Circuits Based on High-Performance n-Type Organic Electrochemical Transistors

3. Organic Electrochemical Transistors for Biomarker Detections

4. Flexible and Stretchable Organic Electrochemical Transistors for Physiological Sensing Devices

5. Vertical organic electrochemical transistors for complementary circuits