Effects of post-transfer annealing and substrate interactions on the photoluminescence of 2D/3D monolayer WS2/Ge heterostructures

Author:

Zhang Tianyi12ORCID,Voshell Andrew3,Zhou Da24ORCID,Ward Zachary D.5,Yu Zhuohang12,Liu Mingzu24,Díaz Aponte Kevin O.3ORCID,Granzier-Nakajima Tomotaroh24,Lei Yu246,Liu He27,Terrones Humberto5,Elías Ana Laura8ORCID,Rana Mukti3,Terrones Mauricio1247ORCID

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA

2. Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA

3. Division of Physics, Engineering, Mathematics and Computer Sciences and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA

4. Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA

5. Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

6. Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China

7. Department of Chemistry, The Pennsylvania State University, University Park, PA 16802, USA

8. Department of Physics, Binghamton University, Binghamton, NY 13902, USA

Abstract

Post-transfer annealing affects optical properties of monolayer WS2/Ge(100) 2D/3D heterostructures. Stronger van der Waals interactions change the electronic band structure of WS2, narrowing its gap and largely quenching the photoluminescence.

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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