Colossal permittivity with ultralow dielectric loss in In + Ta co-doped rutile TiO2-Reference-Cited by-同舟云学术

Colossal permittivity with ultralow dielectric loss in In + Ta co-doped rutile TiO2

Published:2017 Issue:11 Volume:5 Page:5436-5441
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Dong Wen¹²³^ORCID,Hu Wanbiao¹²³,Frankcombe Terry J.¹²³⁴⁵,Chen Dehong¹²³^ORCID,Zhou Chao⁶⁷,Fu Zhenxiao⁶⁷,Cândido Ladir⁸⁹¹⁰¹¹,Hai Guoqiang¹²¹³¹⁴¹¹,Chen Hua¹⁵²³,Li Yongxiang¹⁶¹⁷¹⁸¹⁹⁷,Withers Ray L.¹²³,Liu Yun¹²³

Affiliation:

1. Research School of Chemistry

2. The Australian National University

3. Australia

4. School of Physical

5. Environmental and Mathematical Sciences

6. Fenghua Advanced Technology Holding Co. Ltd.

7. China

8. Instituto de Física

9. Universidade Federal de Goiás

10. Goiânia

11. Brazil

12. Instituto de Física de São Carlos

13. Universidade de São Paulo

14. São Carlos

15. Centre for Advanced Microscopy

16. The Key Lab of Inorganic Functional Materials and Devices

17. Shanghai Institute of Ceramics

18. Chinese Academy of Sciences

19. Shanghai 200050

Abstract

Electron-pinned defect dipoles, in the form of highly stable triangle-diamond and/or triangle-linear dopant defect clusters with well defined relative positions for Ti reduction, are present in rutile In + Ta co-doped TiO₂ for the colossal permittivity and low loss.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TA/C6TA08337D

Reference29 articles.

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4. Surface-layer effect in CaCu3Ti4O12

5. Polaron relaxation and variable-range-hopping conductivity in the giant-dielectric-constant material CaCu3Ti4O12

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