Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism-Reference-Cited by-同舟云学术

Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism

Published:2018 Issue:35 Volume:10 Page:16759-16764
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Chunxiao¹²³⁴⁵^ORCID,Huang Huaqing⁵⁶⁷⁸,Ni Xiaojuan⁵⁶⁷⁸,Zhou Yinong⁵⁶⁷⁸,Kang Lei⁵⁶⁷⁸,Jiang Wei⁵⁶⁷⁸^ORCID,Chen Haiyuan⁵⁶⁷⁸,Zhong Jianxin¹²³⁴,Liu Feng⁵⁶⁷⁸⁹

Affiliation:

1. Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices

2. Xiangtan University

3. Hunan 411105

4. People's Republic of China

5. Department of Materials Science and Engineering

6. University of Utah

7. Salt Lake City

8. USA

9. Collaborative Innovation Center of Quantum Matter

Abstract

The critical role of de-charge transfer in tuning the band gap of layered 2D materials.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hunan Province

U.S. Department of Energy

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR04660C

Reference34 articles.

1. Integrated Circuits Based on Bilayer MoS2 Transistors

2. Tuning On–Off Current Ratio and Field-Effect Mobility in a MoS2–Graphene Heterostructure via Schottky Barrier Modulation

3. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

4. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

5. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

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