Mechanisms for low-temperature direct bonding of Si/Si and quartz/quartz via VUV/O3 activation-Reference-Cited by-同舟云学术

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Mechanisms for low-temperature direct bonding of Si/Si and quartz/quartz via VUV/O3 activation

Published:2018 Issue:21 Volume:8 Page:11528-11535
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Jikai¹²³⁴,Wang Chenxi¹²³⁴^ORCID,Wang Te¹²³⁴,Wang Yuan¹²³⁴,Kang Qiushi¹²³⁴,Liu Yannan¹²³⁴,Tian Yanhong¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Advanced Welding and Joining

2. Harbin Institute of Technology

3. Harbin 150001

4. China

Abstract

Low-temperature Si/Si and quartz/quartz direct bonding was realized via VUV/O₃ activation and bonding mechanisms proposed.

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Postdoctoral Foundation of Hei Long Jiang Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA13095C

Reference35 articles.

1. Wafer bonding for silicon‐on‐insulator technologies

2. Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

3. Extended-Nanofluidics: Fundamental Technologies, Unique Liquid Properties, and Application in Chemical and Bio Analysis Methods and Devices

4. Silicon‐to‐silicon direct bonding method

5. Low temperature wafer direct bonding

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