Resistive switching behaviour in a polymannose film for multistate non-volatile memory application-Reference-Cited by-同舟云学术

Resistive switching behaviour in a polymannose film for multistate non-volatile memory application

Published:2021 Issue:4 Volume:9 Page:1437-1450
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tayeb Ilias A.¹²³⁴⁵^ORCID,Zhao Feng⁶⁷⁸⁹¹⁰,Abdullah Jafri M.¹¹¹²¹³¹⁴¹⁵,Cheong Kuan Y.¹²³⁴⁵^ORCID

Affiliation:

1. Electronic Materials Research Group

2. School of Materials & Mineral Resources Engineering

3. Universiti Sains Malaysia

4. Nibong Tebal

5. Malaysia

6. Micro/Nanoelectronic and Energy Laboratory

7. School of Engineering and Computer Science

8. Washington State University

9. Vancouver

10. USA

11. Brain Behaviour Cluster

12. School of Medical Sciences

13. Universiti Sains Malaysia Health Campus

14. Jalan Hospital USM

15. Kota Bahru

Abstract

With the shift towards reducing electronic waste, bio-organic materials are considered as prominent alternatives to produce resistive switching memory due to their biodegradability and benign environmental impacts.

Funder

Ministry of Higher Education, Malaysia

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC04655H

Reference84 articles.

1. Ferroelectric Random Access Memories

2. Phase change materials and phase change memory

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Memristive devices for computing

5. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

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