Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate-Reference-Cited by-同舟云学术

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Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate

Published:2020 Issue:9 Volume:7 Page:2328-2335
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Chen Aitian¹²³⁴^ORCID,Huang Haoliang⁵⁶⁷⁸⁹^ORCID,Wen Yan¹²³⁴,Liu Wenyi⁵⁶⁷⁸⁹,Zhang Senfu¹²³⁴,Kosel Jürgen¹⁰¹¹²³⁴,Sun Weideng¹²¹³¹⁴⁹,Zhao Yonggang¹²¹³¹⁴⁹,Lu Yalin⁵⁶⁷⁸⁹,Zhang Xi-Xiang¹²³⁴^ORCID

Affiliation:

1. Physical Science and Engineering Division

2. King Abdullah University of Science and Technology

3. Thuwal 23955-6900

4. Saudi Arabia

5. Anhui Laboratory of Advanced Photon Science and Technology

6. Hefei National Laboratory for Physical Sciences at the Microscale

7. University of Science and Technology of China

8. Hefei 230026

9. China

10. Computer

11. Electrical and Mathematical Sciences and Engineering Division

12. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics

13. Tsinghua University

14. Beijing 100084

Abstract

We demonstrate a giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate.

Funder

King Abdullah University of Science and Technology

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/MH/D0MH00796J

Reference35 articles.

1. The 2017 Magnetism Roadmap

2. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

3. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

4. Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

5. Two-terminal spin–orbit torque magnetoresistive random access memory

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