Strain-induced bandgap engineering in CsGeX<sub>3</sub> (X = I, Br or Cl) perovskites: insights from first-principles calculations-Reference-Cited by-同舟云学术

Strain-induced bandgap engineering in CsGeX₃ (X = I, Br or Cl) perovskites: insights from first-principles calculations

Published:2022 Issue:9 Volume:24 Page:5448-5454
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Xiang Guangbiao¹,Wu Yanwen¹,Zhang Man¹,Leng Jiancai²^ORCID,Cheng Chen¹,Ma Hong¹^ORCID

Affiliation:

1. Shandong Provincial Key Laboratory of Optics and Photonic Device, Collaborative Innovation Center of Light Manipulations and Applications, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China

2. International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China

Abstract

The electronic structures, DOSs, carrier transport properties, and optical properties of CsGeX3 (X = I, Br or Cl) perovskites under triaxial strains of −4% to 4% were investigated based on density functional theory.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Jinan Science and Technology Bureau

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D1CP05787A

Reference60 articles.

1. Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent