Theoretical study of the effect of different n-doping elements on band structure and optical gain of GeSn alloys

Author:

Huang Wenqi1234ORCID,Yang Hong1234,Cheng Buwen5634,Xue Chunlai5634

Affiliation:

1. School of Applied Science

2. Beijing Information Science & Technology University

3. Beijing

4. China

5. State Key Laboratory on Integrated Optoelectronics

6. Institute of Semiconductors

Abstract

Doping with Sb and Bi can assist in converting GeSn into a direct bandgap material and improve its optical gain.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference53 articles.

1. Z. G. Tegegne , C.Viana, J. L.Polleux, M.Grzeskowiak and E.Richalot, in Silicon Photonics Xi, ed. G. T. Reed and A. P. Knights, 2016, vol. 9752

2. Monolithic Integration of a Silicon-Based Photonic Transceiver in a CMOS Process

3. Emerging heterogeneous integrated photonic platforms on silicon

4. D. Buca , N. v. d.Driesch, D.Stange, S.Wirths, R.Geiger, C. S.Braucks, S.Mantl, J. M.Hartmann, Z.Ikonic, J.Witzens, H.Sigg and D.Grützmacher, GeSn Lasers for CMOS Integration, 62nd Annual IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2016, ISBN: 978-1-5090-3902-9, ISSN: 2380-9248

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