High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity-Reference-Cited by-同舟云学术

High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity

Published:2019 Issue:42 Volume:7 Page:13149-13155
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhou Haitao¹²³⁴,Cong Lujia¹²³⁴,Ma Jiangang¹²³⁴^ORCID,Li Bingsheng¹²³⁴,Chen Mingzhu⁵⁶⁴,Xu Haiyang¹²³⁴^ORCID,Liu Yichun¹²³⁴

Affiliation:

1. Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education

2. Northeast Normal University

3. Changchun 130024

4. People's Republic of China

5. Hebei Agricultural University

6. Cangzhou 061100

Abstract

In this work, a high gain broadband photoconductor based on a wide bandgap amorphous gallium oxide film was reported. Meanwhile, a novel short-time heating method was demonstrated to effectively suppress the PPC effect.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC05159G

Reference53 articles.

1. A Stretchable Nanowire UV-Vis-NIR Photodetector with High Performance

2. High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

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4. Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

5. High-Performance Flexible Broadband Photodetector Based on Organolead Halide Perovskite

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