A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity-Reference-Cited by-同舟云学术

A high performance broadband photodetector based on (SnxSb1−x)2Se3 nanorods with enhanced electrical conductivity

Published:2018 Issue:41 Volume:6 Page:11078-11085
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Chen Shuo¹²³⁴⁵^ORCID,Shehzad Khurram⁶²³⁴^ORCID,Qiao Xvsheng¹²³⁴⁵^ORCID,Luo Xue¹²³⁴⁵,Liu Xuemei⁶²³⁴,Zhang Yuting¹²³⁴⁵,Zhang Xianghua⁷⁸⁹¹⁰,Xu Yang⁵³⁴⁶²,Fan Xianping¹²³⁴⁵^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Zhejiang University

3. Hangzhou

4. P. R. China

5. State Key Laboratory of Silicon Materials

6. School of Information Science and Electronic Engineering

7. Laboratory of Glasses and Ceramics

8. Institute of Chemistry

9. 35042 Rennes cedex

10. France

Abstract

An effective hot-injection method is used to synthesize (Sn_xSb_1−x)₂Se₃ nanorods with enhanced electrical conductivity for high performance broadband photodetection.

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

State Key Laboratory of Silicon Materials

National Laboratory of Solid State Microstructures, Nanjing University

Natural Science Foundation of Zhejiang Province

Churchill College, University of Cambridge

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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