Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2-Reference-Cited by-同舟云学术

Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2

Published:2020 Issue:13 Volume:8 Page:4314-4320
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ye Fan¹²³⁴⁵,Chen Qian-Qian¹²³⁴⁵,Cai Xing-Min¹²³⁴⁵^ORCID,Xie Yi-Zhu¹²³⁴⁵,Ma Xiu-Fang¹²³⁴⁵,Vaithinathan Karthikeyan⁶⁷⁸⁵,Zhang Dong-Ping¹²³⁴⁵,Fan Ping¹²³⁴⁵,Roy V. A. L.⁶⁷⁸⁵^ORCID

Affiliation:

1. School of Physics and Optoelectronic Engineering

2. and Shenzhen Key Laboratory of Advanced Thin Films and Applications

3. Shenzhen University

4. Shenzhen 518060

5. China

6. Department of Materials Science and Engineering

7. City University of Hong Kong

8. Hong Kong

Abstract

Nondegerate ZnSnN₂ with mobility over 20 cm² V⁻¹ s⁻¹ was fabricated by improving the chemical potentional of nitrogen to tune the stoichiometry.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06965H

Reference39 articles.

1. Electronic and lattice dynamical properties of II-IV-N2 semiconductors

2. Quasiparticle band structure of Zn-IV-N2compounds

3. Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule

4. Monte Carlo simulations of disorder in ZnSnN2 and the effects on the electronic structure

5. Phase Stability and Defect Physics of a Ternary ZnSnN2Semiconductor: First Principles Insights

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