Enhanced responsivity of a graphene/Si-based heterostructure broadband photodetector by introducing a WS2 interfacial layer-Reference-Cited by-同舟云学术

Enhanced responsivity of a graphene/Si-based heterostructure broadband photodetector by introducing a WS2 interfacial layer

Published:2021 Issue:11 Volume:9 Page:3846-3853
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

He Tianying¹²,Lan Changyong¹²^ORCID,Zhou Sihan¹²,Li Yongjun¹²,Yin Yi¹²^ORCID,Li Chun¹²³²^ORCID,Liu Yong¹²

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, and School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China

2. China

3. Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics

Abstract

The photodetection performance of the graphene (Gr)/Si 2D/3D heterostructure can be very broadly enhanced by introducing an optimized ultrathin WS₂ film prepared by sulfidation as an interfacial layer.

Funder

National Key Research and Development Program of China

Innovative Research Group Project of the National Natural Science Foundation of China

National Natural Science Foundation of China

Wuhan National Laboratory for Optoelectronics

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D0TC05796G

Reference51 articles.