Determination of relative sensitivity factors of elements in high purity copper by doping-melting and doping-pressed methods using glow discharge mass spectrometry-Reference-Cited by-同舟云学术

Determination of relative sensitivity factors of elements in high purity copper by doping-melting and doping-pressed methods using glow discharge mass spectrometry

Published:2016 Issue:11 Volume:31 Page:2182-2191
ISSN:0267-9477
Container-title:Journal of Analytical Atomic Spectrometry
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Zhang Jianying¹²³⁴⁵,Zhou Tao⁵³⁴,Tang Yichuan⁵³⁴,Cui Yanjie⁵³⁴,Li Jinying¹²³⁴

Affiliation:

1. Department of Radiochemistry

2. China Institute of Atomic Energy

3. Beijing

4. PR China

5. National Institute of Metrology

Abstract

The calibration samples were prepared from high pure copper powder doped with standard solutions of graduated and defined concentration. And then a part of them was melted into bulks and another was pressed to tablets.

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/JA/C6JA00172F

Reference35 articles.

1. Detection limits for glow discharge mass spectrometry (GDMS) analyses of impurities in solar cell silicon

2. Glow discharge mass spectrometry

3. Application of glow discharge mass spectrometry to multielement ultra-trace determination in ultrahigh-purity copper and iron: a calibration approach achieving quantification and traceability

4. Analysis of impurities with inhomogeneous distribution in multicrystalline solar cell silicon by glow discharge mass spectrometry

5. Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

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