Electronic structure and optical spectra of MSi<sub>2</sub>N<sub>4</sub> (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study-Reference-Cited by-同舟云学术

Electronic structure and optical spectra of MSi₂N₄ (M = Mo, Ta, V) materials with single-atom decoration: a first-principles study

Published:2023 Issue:43 Volume:11 Page:15097-15105
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wu Tzu-Cheng¹²,Liao Yin-Song³⁴,Kao Jui-Cheng⁵^ORCID,Chou Jyh-Pin⁶^ORCID

Affiliation:

1. Department of Physics, National Tsing Hua University, Hsinchu 300044, Taiwan

2. The Affiliated Senior High School of National Taiwan Normal University, Taipei 10658, Taiwan

3. Tsing Hua Interdisciplinary Program, National Tsing Hua University, Hsinchu 300044, Taiwan

4. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan

5. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

6. Department of Physics, National Changhua University of Education, Changhua 50007, Taiwan

Abstract

Single atom decoration can modify the electronic properties, making TaSi2N4 suitable for spintronics and turning VSi2N4 into a half-metal semiconductor. These findings have potential applications in advanced electronic devices.

Funder

National Science and Technology Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02817H

Reference41 articles.

1. Ultralow contact resistance between semimetal and monolayer semiconductors

2. 2D semiconductors for specific electronic applications: from device to system

3. Valleytronics in two-dimensional materials with line defect

4. Robust valley filter induced by quantum constructive interference in graphene with line defect and strain

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