A strain or electric field induced direct bandgap in ultrathin silicon film and its application in photovoltaics or photocatalysis-Reference-Cited by-同舟云学术

A strain or electric field induced direct bandgap in ultrathin silicon film and its application in photovoltaics or photocatalysis

Published:2016 Issue:10 Volume:18 Page:7156-7162
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Cao Tengfei¹²³,Wang Da¹²³,Geng Dong-Sheng¹²³,Liu Li-Min¹²³,Zhao Jijun¹²³⁴⁵

Affiliation:

1. Beijing Computational Science Research Center

2. Beijing 100084

3. China

4. Key Laboratory of Materials Modification by Laser

5. Ion and Electron Beams

Abstract

Direct bandgaps are highly desired in all silicon allotropes. For ultrathin silicon films, strain or electric field can efficiently induce direct band-gaps in them.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP06528C

Reference56 articles.

1. Band Structure of Silicon, Germanium, and Related Semiconductors

2. Direct Band Gap Silicon Allotropes

3. Indirect to direct band gap transition in ultra-thin silicon films

4. The Nature of Photocatalytic “Water Splitting” on Silicon Nanowires

5. Tunable Bandgap in Silicene and Germanene

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