Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs-Reference-Cited by-同舟云学术

Ultrathin non-doped thermally activated delayed fluorescence emitting layer for highly efficient OLEDs

Published:2021 Issue:100 Volume:57 Page:13728-13731
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Nanda Gyana Prakash¹,Sk Bahadur¹^ORCID,Yadav Nisha¹^ORCID,Rajamanickam Suresh¹^ORCID,Deori Upasana¹^ORCID,Mahashaya Rahul¹^ORCID,Zysman-Colman Eli²^ORCID,Rajamalli Pachaiyappan¹^ORCID

Affiliation:

1. Materials Research Centre, Indian Institute of Science, Bangalore-560012, Karnataka, India

2. Organic Semiconductor Centre, EaStCHEM School of Chemistry, University of St Andrews, St Andrews, UK

Abstract

The ultrathin (~1 nm) emissive layer of a TADF emitter shows 2.6 times higher EQE with high brightness than conventional (30 nm) non-doped OLED devices.

Funder

Engineering and Physical Sciences Research Council

Council of Scientific and Industrial Research, India

Indian Institute of Science

Leverhulme Trust

Science and Engineering Research Board

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CC/D1CC04972K

Reference53 articles.

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